Harris Semiconductor RFD8P05 Transistor MOSFET P-Chanel 8A 50V 300mOhms TO-251-3

Harris Semiconductor RFD8P05 Transistor MOSFET P-Chanel 8A 50V 300mOhms TO-251-3 Autres Prix: Si vous avez besoin de plus de quantités et bénéficier dun meilleur tarifContactez-Nous :[email protected] Prices: If you need more quantities and get a better priceContact Us:[email protected] : NewDate Code : 9414Manufacturer :Harris SemiconductorP/N :RFD8P05Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-251-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 50 V Id - Continuous Drain Current: 8 A Rds On - Drain-Source Resistance: 300 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 48 W Channel Mode: Enhancement Configuration: Single Fall Time: 20 ns Height: 6.3 mm Length: 6.8 mm Product Type: MOSFET Rise Time: 30 ns Subcategory: MOSFETs Transistor Type: 1 P-Channel Typical Turn-Off Delay Time: 42 ns Typical Turn-On Delay Time: 16 ns Width: 2.5 mm Autres Prix: Si vous avez besoin de plus de quantités et bénéficier dun meilleur tarifContactez-Nous :[email protected] Prices: If you need more quantities and get a better priceContact Us:[email protected] : NewDate Code : 9414Manufacturer :Harris SemiconductorP/N :RFD8P05Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-251-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 50 V Id - Continuous Drain Current: 8 A Rds On - Drain-Source Resistance: 300 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 48 W Channel Mode: Enhancement Configuration: Single Fall Time: 20 ns Height: 6.3 mm Length: 6.8 mm Product Type: MOSFET Rise Time: 30 ns Subcategory: MOSFETs Transistor Type: 1 P-Channel Typical Turn-Off Delay Time: 42 ns Typical Turn-On Delay Time: 16 ns Width: 2.5 mmeBay integration by

Harris Semiconductor RFD8P05 Transistor MOSFET P-Chanel 8A 50V 300mOhms TO-251-3

Autres Prix: Si vous avez besoin de plus de quantités et bénéficier dun meilleur tarifContactez-Nous :[email protected] Prices: If you need more quantities and get a better priceContact Us:[email protected] : NewDate Code : 9414Manufacturer :Harris SemiconductorP/N :RFD8P05Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-251-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 50 V Id - Continuous Drain Current: 8 A Rds On - Drain-Source Resistance: 300 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 48 W Channel Mode: Enhancement Configuration: Single Fall Time: 20 ns Height: 6.3 mm Length: 6.8 mm Product Type: MOSFET Rise Time: 30 ns Subcategory: MOSFETs Transistor Type: 1 P-Channel Typical Turn-Off Delay Time: 42 ns Typical Turn-On Delay Time: 16 ns Width: 2.5 mm